| 摘要 |
PURPOSE:To obtain the element characterized by low manufacturing energy and high light-to-electricity transducing efficiency, when an optical electromotive force is obtained by forming SnO2 on an Si substrate or another substrate wherein an Si thin film is provided on the surface, by performing the growth in an oxidizing atmosphere including the vapor of a volatile Sn compound or a gaseous Sn compound at the substrate temperature of 300-450 deg.C. CONSTITUTION:SnO2 is grown on the N type Si substrate, and the SnO2/Si photoelectric transducer element is obtained. At this time, an inactive gas is used as a carrier gas, and SnCl4 is used as the Sn compound. Or N2O vapor is used as an oxidizing gas, SnCl4 is used, and SbCl5 is used as N type dopant together. In any cases, the process is performed at the low substrate temperature of 300-450 deg.C. Thus the element which is not accompanied by the decrease in an open voltage and a terminal voltage can be obtained. |
