| 摘要 |
PURPOSE:To obtain the inexpensive FET whose mutual conductance is large, when J-FET having many channels is formed, by changing only the arrangement of a gate regions and source and drain regions by using metallic electrodes without changing the manufacturing process from an ordinary method at all and without decreasing a reverse withstand voltage and a threshold voltage. CONSTITUTION:An N type layer 12 is epitaxially grown on a P type semiconductor substrate 11. The layer 12 is separated by a P type region 13 reaching the substrate 11 into an island shape. P type gate regions 14, N type source regions 15, and N type drain regions 16 are diffused and formed in a shape of meshes thereon. That is, the source region 15 and the drain region 16 are surrounded by the gate region 14 from all four sides. Therefore the channel regions formed by the substrate 11 and the gate regions 14 and configured by four sides with respect to each source region and each drain region. Thereafter, source, drain, and gate electrodes 18-20 are attached to the respective regions. In this constitution, the channel regions are doubled and the mutual conductance is also doubled. |
