SEMICONDUCTOR LIGHT EMITTING DEVICE ON GALLIUM NITRIDE BASE AND METHOD FOR MANUFACTURE THEREOF

摘要

The device comprises a substrate (1) fabricated of monocrystalline material, which is transparent in a visible region of a spectrum. A gallium nitride layer (2) having n-type conductivity is deposited on the substrate (1), on which layer another gallium nitride layer (3), doped with acceptor impurities, is deposited. The device comprises also two metal electrodes (5) and (6), to which a voltage is applied so that the electrode (5) has a negative polarity and the electrode (6) has a positive polarity. According to the invention, on the gallium nitride layer (3), doped with acceptor impurities, a layer (4) is formed, which layer consists of insulating material. The method of manufacturing the device includes an epitaxial growth of the gallium nitride layer having n-type conductivity on the substrate which is transparent in the visible spectrum, epitaxial growth of the gallium nitride layer doped with acceptor impurities on the layer (2), and a formation of two metal electrodes. According to the invention, the layer of insulating material is formed before two metal electrodes have been formed on the gallium nitride layer doped with acceptor impurities.