| 摘要 |
PURPOSE:To extremely improve the characteristics of a solar cell using an amorphous semiconductor film by previously treating the surface of a substrate by irradiating with ultraviolet rays in a hydrogen atmosphere. CONSTITUTION:A substrate coated with a transparent conductive film is washed in a washing room 1 and sent to a drying room 2. The substrate 10 brought in a previous treatment room 3 after washing and drying is held on a holder 23 and heated by a heater 24. Simultaneously, a hydrogen gas is introduced from a hydrogen gas supply inlet 15 and the inside of the previous treatment room 3 is kept with a hydrogen atmosphere. Then, ultraviolet rays 26 are irradiated from a mercury lamp 21 via a window 22 on the surface of the substrate. Continuously, the substrate is brought in a film forming room 4 of amorphous semiconductor and a p-type amorphous film 33, an amorphous semiconductor (i) film 34 and an N film 35 are formed on the substrate 10 and at last, a solar cell is formed by adding a metal electrode 36. By an extremely simple previous treatment of irradiating the ultraviolet rays in the hydrogen atmosphere, the characteristics of the amorphous semiconductor solar cell can greatly be improved.
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