| 摘要 |
PURPOSE:To obtain a GaAs semiconductor device having a stable surface without displacing from a stoichiometrical composition by manufacturing it by a method which has the step of heat treating by coating the surface of a semiconductor into which ions are implanted at least with an AlGaAs film. CONSTITUTION:An AlxGa1-xAs film 14 is formed on the clean surface of a GaAs substrate 1, coated with a photoresist 8, and with the photoresist 8 as a mask ions for forming a source region 3 and a drain region 4 are implanted. After the photoresist 8 is removed, photoresist 8' is formed, with the photoresist 8' as a mask Si<+> ions are implanted. An SiO2 film 17 is laminated by a CVD method. Then, a photoresist 8'' is formed, the film 17 is etched, the film 14 is etched with HF etchant, and source and drain electrode materials AuGe/Ni/Au are deposited to form a source electrode 15 and a drain electrode 16. Then, Ti/Pt/Au 16, 16' are deposited, and unnecessary gate electrode 16' is removed to complete a FET.
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