发明名称 VACUUM VAPOR DEPOSITION METHOD
摘要 PURPOSE:To easily control the specified proper quantity of evaporation in a vacuum vapor deposition process in which current is applied to a barlike heater wound with an object to be evaporated, by determining the quantity of evaporation from the change of conduction voltage. CONSTITUTION:For instance, in manufacturing an X-ray fluorescence multiplier tube, a Ti getter, metal to be evaporated, 2 and a spacer 3 made of W that checks flowing of the getter are wound spirally in parallel around a barlike heater 1 made of W. In vapor deposition the heater 1 is heated by applying a fixed current and the getter 2 is melted. At this time, the voltage between heater 1 terminals goes up from a point 0 to a point 4 and after dropping to a point 5, goes up again as shown by 6. The getter 2 starts to melt at the point 4 and melts further to flow into an opening between the spacer, and the voltage drops. When it is melted completely, the voltage rises. The difference in voltage between the dropped point 5 and rising part 6 is in linear relation with the quantity of evaporation. Accordingly, the specified quantity of evaporation can be controlled by detecting the difference in voltage.
申请公布号 JPS58130271(A) 申请公布日期 1983.08.03
申请号 JP19820012772 申请日期 1982.01.29
申请人 TOKYO SHIBAURA DENKI KK 发明人 KATAGAWA HIROSHI
分类号 H01J9/39;C23C14/26;C23C14/54 主分类号 H01J9/39
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