| 摘要 |
PURPOSE:To obtain a silicon single crystal of high quality without growing the deposited corner by growing a silicon single crystal by a pulling method, separating the crystal from the melt at once, and treating under heat it at a high temp. CONSTITUTION:Polycrystalline silicon is filled into a crucible 1 and melted by heating with a heater 2. By pulling up a seed crystal 3, a single crystal ingot 4 is grown while maintaining the relative position of the heater 2 to the surface of the melt. After finishing the crystal growth, the resulting single crystal ingot 4 is positioned just above the surface of the residual melt 5, and the heater 2 is moved upward to the position 2'. The ingot 4 is heated at 1,200 deg.C- the m.p. of silicon for a prescribed time with the heater 2. The power supply is then cut, and the single crystal is pulled up and rapidly cooled. By the heat treatment a silicon single crystal of high quality suitable for a semiconductor integrated circuit, etc. is obtd. |
