HIGH FREQUENCY SEMICONDUCTOR UNIT

摘要

High-frequency semiconductor unit comprises an insulator substrate (3) provide on a metal substrate (1) with mounting holes (2) and defining a central hole in which is mounted a circuit substrate (4) carrying at least one semiconductor element. Independent metallised layers are provided on the insulator substrate (3) and around the circuit substrate (4), these layers including, e.g. hf signal input layers (5) located centrally and extending to the outside of the insulator layer (3), four DC circuit layers (6) disposed generally symmetrically about the hf input layers (5), and electrodes (7,7') at ends of the DC layers (6). An insulating frame (6) is provided on the insulator substrate (3), around and projecting above the hole accommodating the circuit substrate (4), and a hermetic seal element is provided over the frame (8).