| 发明名称 |
Method for forming planar metal/insulator structures |
| 摘要 |
Formation of planar conductor/insulator semiconductor devices utilizing hafnium coated aluminum based metallization with a magnesium oxide mask for dry etching of the metallization and deposition of planar insulation. The hafnium coating is used to protect the aluminum metallization during mask removal, and as a registration enhancer for subsequent electron-beam processing.
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| 申请公布号 |
US4396458(A) |
申请公布日期 |
1983.08.02 |
| 申请号 |
US19810333196 |
申请日期 |
1981.12.21 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
PLATTER, VALERIA;ROTHMAN, LAURA B.;SCHAIBLE, PAUL M.;SCHWARTZ, GERALDINE C. |
| 分类号 |
H01L21/3205;H01L21/302;H01L21/3065;H01L21/3213;H01L21/48;H01L21/768;H01L23/498;H01L23/532;H05K3/46;(IPC1-7):H01L21/30;B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
H01L21/3205 |
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