摘要 |
A method is disclosed for peeling thin epitaxially grown crystalline layers (epilayers) from the substrates on which they have been grown. A thin layer of single-crystal is epitaxially grown on a substrate, where material at the interface of the epilayer and the substrate has a lower melting point temperature than does the epilayer. Heat is added to the lower melting point temperature material in order to liquify at least part of it. A voltage is applied between the epilayer and an adjacent structure in order to develop an electrical force on the epilayer to facilitate peeling of the epilayer away from the substrate.
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