| 摘要 |
The preferred embodiment of the invention disclosed herein provides a CCD imager with reduced striation contrast in its displayed image. The wafer on which the imager is to be formed is lightly doped with atoms of one conductivity type. Before forming the various regions of the imager in the wafer, a layer is first doped with atoms of the same conductivity type so as to have a substantially uniform lateral concentration. This is preferably accomplished by ion implantation and diffusion techniques. Thereafter, an imager is formed in this layer in accordance with any desired technique.
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