| 摘要 |
PURPOSE:To prevent deterioration of precision in an enhanced density device by a method wherein conductor regions to be subjected to non-contact potential measurement by means of electron beam radiation is kept a prescribed distance from conductors with different potentials. CONSTITUTION:To measure the potential between leads 8 and 9, gaps d1-d8 should be not less than 4mum, in the vicinity of regions 10, 11 to be exposed to electron beam radiation. The region 10 is to be located at a spot separated not less than 4mum from other conductors in a conductive pattern designed in a conventional manner without considering the use of an electron beam to measure potential. The region 11, wherefore no such locations are available in a conventional designed as referred to above, and therefore to be positioned as indicated by broken lines, has a part of the conductor pattern extended for measurement with other conductors routed around. A semiconductor device of this design is less affected by nearby conductors in a non-contact potential measurement by means of electron beam radiation and never experiences an error serious enough to incapacitate a logic level decision or the like. |
