| 摘要 |
PURPOSE:To cut down the price of dielectric substrate remarkably by a method wherein a substrate supporter is formed by a simple device at high depositing speed making use of the phenomenon of fine particles charged in solution. CONSTITUTION:A vessel 10 is filled with water 11 mixed with super fine particles of dielectric or semiconductor. In order to form a dielectric substrate, Si substrate 15 formed into V type grooves is inserted into water 11 so that the V type grooves may be opposite to the negative electrode 14 supplying the substrate with positive voltage from DC power supply 13. The fine particles are formed into electric dual layers in the solution making potential differences in particle radius a, electric charge Q, dielectric power factor D, 1/(1+Ka).Q/Da with constant K at the boundary between the surface of particles and solution with the fine particles shifting to Si substrate of the positive electrode. The fine particles such as Si, SiO2 and B2O5 etc. are mixed with water making the depositing speed around 100mum/min subject to even film thickness at the efficiency higher than that of CVD process. The power supply shall be selected in terms of the kinds of solution, additive or fine particles. |
