| 摘要 |
PURPOSE:To form an associative memory circuit with less wiring number and possible for high density, large capacity and low cost, by forming the circuit using stored information in using P channel MIS transistors (TRs) and N channel MIS TRs. CONSTITUTION:The P channel MOS TR(hereinafter P-MOS)5 is connected to the 1st terminal 2 of the memory circuit 1 and the N channel MOS TR(hereinafter N-MOS)4 is connected to the 2nd terminal 3. In applying retrieval information to supply lines 12, 13 retrieval is executed for the associative memory circuits 8-11. When the stored information Q and the retrieval information S are coincident in the two associative memory circuits, e.g., 8, 9 forming one word, since no current flows to the corresponding 2nd retrieval result output terminal 14 or the terminal remains at a low potential, this state is detectable. Thus, the associative memory circuits can detect the word having the storage information coincident with the retrieval information, allowing to attain retrieval. |
