| 摘要 |
PURPOSE:To attain the formation of U-shaped grooves with high accuracy, by decreasing the angle of a tilt surface at the opposite side as the operating gap of a V-shaped groove and adopting the ion etching method for the process of the U-shaped groove formation. CONSTITUTION:The V-shaped groove 3 having good linearity is formed on the 1st magnetic thin film 2 with the shaping using a diamond bite, the slope 3a is taken as the operating gap plane having a prescribed azimuth angle, and an angle theta1 of the slope 3b is taken as <=20 deg.. Fig. (b) shows the shape of sliding plane after the 2nd magnetic thin film 5 near the top of the gap slope 3a is removed in the U-shape with the ion etching method. As the ion etching conditions, 8X10<-5>Torr. of gaseous argon pressure, 600V of acceleration voltage, 0.5mA/cm<2> of current density, an incident angle theta2 of the ion beam is taken equal to the angle theta1 of the slope 3b. Thus, the shaping is performed until the 2nd magnetic thin film 5 is separated left and right by said U-shaped groove 6. A nonmagnetic material is coated on the upper surface, a winding hole is formed and a winding is wound to complete the head. |
