| 摘要 |
PURPOSE:To eliminate the faulty adhesiveness of a photomask by coating the surface of a photoresist film with very thin resin which is light-transmitting and non-photosensitive. CONSTITUTION:After an Al film 2 to be formed into a conductor pattern is formed on a silicon wafer 1 by evaporation, a positive-type photoresist film 3 is formed thereon, and further a water-soluble polyvinyl alcohol resin film 4 is formed thereon with the thickness varied in the range of 50-1,000Angstrom , a light- transmitting and non-photosensitive resin. Successively, a minute photomask pattern is formed on said resin 4. In a method of forming such a minute pattern, a time at which a photomask 5 and the wafer 1 start to separate from each other during exposure was examined with the thickness of the resin film 4 varied. As the result, it was found that the exposure could be performed in the state that the photomask 5 adhered completely to the polyvinyl alcohol resin film 4 by connecting the film 4 with the thickness of 100Angstrom or more to the film 3, and that it was very preferable for the film to be about 100-200 deg.C thick in view of an optimum time of exposure and a time for a preparatory process. |
