| 摘要 |
PURPOSE:To provide a structure of integrated circuit for high accuracy, high breakdown voltage constant current circuit by providing a part of collector low resistance layer extending to the emitter region at least on the collector region of input transistor. CONSTITUTION:There exists a relationship, D=W/(2 tantheta) between the etching depth D and width W of mask material. An aperture 23 of mask material can be formed for the desired depth D using such relationship. Then after removing a mask material 22, an impurity in the same conductivity type as the substrate is implanted on the entire part and moreover a dielectric film 11 is formed. Thereafter, the dielectric material separation process is executed, where a thick polycrystalline Si which becomes a supporting substrate 10 is deposited and unfavorable Si layer 24 is removed. Then, a desired integrated circuit can be realized by forming the base collector junction, emitter base junction and electrodes. |
