| 摘要 |
PURPOSE:To obtain a silicon semiconductor layer having excellent semiconductor characteristics by a method wherein the surface to be purified of the silicon semiconductor layer which is kept at a reaction temperature in a high vacuum is purified by the application of silicon beams. CONSTITUTION:A substrate 1 formed of glass, ceramics or the like is set in a high vacuum tank of 10<-7>Torr or above, and a silicon semiconductor layer 2 is formed therein. Next, an SiO2 film is formed as a gate insulating film 3. Then, contact holes 4 for source and drain electrodes are formed, and silicon beams 7 are applied from the side of the gate insulating film 3. On the occasion, the silicon semiconductor layer 2 is kept at a temperature of 1,000 deg.C or above whereat silicon reacts with SiO2 constituting an oxide film 5. The intensity of the applied silicon beams 7 is set at 1X10<15>atom/cm<2>.sec or less, since the silicon is deposited on the surface on which the beams are applied, when the intensity is excessively high. When the silicon beams 7 are applied onto the surface of the SiO2 oxide film 5, a reaction shown by the following reaction formula takes place, thereby the SiO2 oxide film 5 is removed and the clean silicon semiconductor layer 2 is exposed, while the remnant 6 of a resist and other substances of pollution are also removed. Si+SiO2 2SiO. |
