| 摘要 |
PURPOSE:To contrive the long lifetime and the improvement of manufacturing yield by a method wherein a Ga1-xAlxAs layer and a GaAs layer are formed on a GaAs base plate resulting in the constitution of a substrate. CONSTITUTION:In a semiconductor laser element constituted by a method wherein a structure with at least the upper and lower parts of an active layer constituted of GaAs sandwiched by clad layers constituted of GaAlAs and conductive type different each other is provided on the upper surface of a substrate becoming the same conductive type as the clad layer of the lower layer, said substrate is constituted of a thin base plate 8 consisting of GaAs, the first thick epitaxial layer 9 consisting of Ga1-xAlx As (x is mixed crystal solution) formed on this base plate, and the second thin epitaxial layer 10 consisting of GaAs formed on this first epitaxial layer. The mixed crystal ratio of said first epitaxial layer is 0.25-0.35 at the surface part on the second epitaxial layer side. |
