| 摘要 |
PURPOSE:To offer an insulation gate type transistor which has a current saturation characteristic and a wide operational voltage region and wherein the constitution of an IC is easy by the lateral structure, by forming the thickness of an active layer less than pi/2 times of Debye length proper to a semiconductor constituting said active layer. CONSTITUTION:When the voltage VGK between a gate and a cathode is negative, the inside of the active layer 11 is formed into depletion. The VGK is the value in a range wherein an inversion layer due to holes is not formed at the interface between said active layer 11 and a gate insulation film 14. Thereat, even when a positive voltage is impressed between an anode and a cathode, current hardly flows. When the VGK is positive, electrons are accumulated in excess into the active layer 11 in the neighborhood of the cathode 12. Thereat, when a positive voltage VAK is impressed between the anode and cathode, holes injected into the active layer 11 from the anode 13 can be recombined with electrons accumulated in the active layer 11 in the neighborhood of the cathode 12. Since necessary electrons are successively injected from the cathode 12, the current IAK flows between the anode and cathode. Where, the thickness tc of the active layer 11 has the value less than pi/2 times of the Debye length LDE proper to an N type semiconductor constituting this active layer 11. |
