| 摘要 |
PURPOSE:To make an infrared radiation cutting filter as unnecessary when the photo sensor is to be produced by providing photosensitive regions of the plural number on the face on one side of a transparent substrate, while by forming filters of the plural number having the different permeating wave-length bands on the face on another side making them to face to the regions by a method wherein the photosensitive regions are constituted of a photo active layer mainly consisting of an amorphous semiconductor formed uniformly extending over the whole region thereof. CONSTITUTION:The photosensitive regions 11R, 11G, 11B of the plural number are formed on the face on one side of the transparent substrate 10 consisting of glass, heat resisting plastics, etc. At this time, the regions thereof are constituted of respectively laminated bodies of transparent electrodes 12R, 12G, 12B, and the photo active layer 13 consisting of the amorphous semiconductor formed uniformly extending over the whole region, and moreover metal electrodes 14R, 14G, 14B from the substrate 10 side. Then the filters 15R, 15G, 15B of red, green, blue are formed respectively on the face on another side of the substrate 10 making them to face to the regions thereof. Accordingly, amorphous Si is used without using single crystal Si of which the peak of sensitivity exists in the infrared region. |
