| 摘要 |
PURPOSE:To obtain the semiconductor photo detector generating no trouble such as non-electricity energization after formation of electrodes when the metal electrodes are to be formed in an InP layer provided on the surface of the detector by a method wherein an In1-xGaxAsyP1-y layer (0<=X<1.0<=y<=1) is provided selectively only between the electrodes thereof. CONSTITUTION:An N<-> type InP buffer layer 2, an N type In0.76Ga0.24As0.56P0.44 layer 3, the N<-> type InP layer 4, an In0.76Ga0.24As0.56P0.44 layer 5 are made to grow being laminated on an N<+> type InP substrate 1 according to the vapor phase or liquid phase epitaxial growth method, and a guard ring part 6 having the 80mum inside diameter, the 140mum outside diameter is formed according to ion implantation and annealing. Then the photo resist process is performed to make only the ring type part of the 120mum outside diameter and the 90mum inside diameter remain and to remove the other layer 5, an SiO2 film 8 is adhered on the whole surface, openings are formed, while Cr-Au bonding pads 9 are formed on the exposed layers 5 interposing an AuZn alloy between them. |
