| 摘要 |
PURPOSE:To obtain simply the color sensor having high color detecting precision when the color sensor is to be produced by a method wherein amorphous semiconductor layers are used as thin film type photosensitive elements, the layers thereof are formed on the face on one side of a glass substrate, and filters of red, green, blue to face respectively with the semiconductor layers are formed on the face on another side. CONSTITUTION:The color sensor 10 containing the first-the third thin film type photosensitive elements 12R, 12G, 12B is formed on the face on one side of the transparent substrate 11 consisting of glass or plastics, etc., of about 0.3mm. thickness. Namely, a red color filter film 13R is fixed to the element 12R, a green color filter film 13G is fixed to the element 12G, and a blue color filter film 13B is fixed to the element 12B respectively. Then laminated bodies of a first electrode film 14, a photo active layer 15, a second electrode film 16 are formed making to face with the respective elements on the face of the substrate 11 on the opposite side to the elements thereof. At this time, a tin oxide film or an indium.tin oxide film is used for the electrode film 14, while aluminum, etc., is used for the electrode film 16, and the amorphous semiconductor of about 1mum thickness is used for the photo active layer 15 respectively. |
