| 摘要 |
PURPOSE:To realize the high density of an electrostatic induction type phototransistor, by combining said phototransistor and a frame memory. CONSTITUTION:A phototransistor TR201 receives the incident light and performs a photoelectric conversion with an electronic depleting action. If a vertical flyback time starts under such conditions, phiG1 is set at a high level to turn on an MOS switch 208. Furthermore a vertical scanning circuit 203 has a high-speed operation, and the signal information of a TR201 set vertically is transmitted to a corresponding memory capacitor 212 via signal transmission lines 207 and 209. In a vertical scan period, an MOS switch 205 is turned off. Thus the pulse given from the circuit 203 is transmitted only to a pulse transmission line 204 at a memory capacitor part to turn on a vertical MOS switch 213. Then in a vertical scan period, the pulse given from a horizontal scanning circuit 211 is applied to the gate of a horizontal MOS switch 210. Thus the switch 210 is turned on. Then a signal is read out of the capacitor 212, and the signal voltage emerges at an output load resistance RL. |
