| 摘要 |
PURPOSE:To obtain the laser which can be stably operated for a long period by a method wherein, when the insulator to be used as a protective film is formed on the end face wherefrom the luminous output is picked out of a semiconductor laser, after the insulator has been coated on the end face of each element, the planes of cleavage of these elements are adhered facing to each other, and the insulator coated on the surface of the electrode provided on the area other than the cleavage plane is removed by performing a sputtering. CONSTITUTION:An oblong-shaped semiconductor laser element 5 is formed by growing a Ga1-xAlxAs double hetero junction epitaxial crystal 2 on an N type GaAs substrate 1 and by attaching a P type electrode 3 and an N type electrode 4 thereon. Then, the cleavage planes are placed on a number of substrates 7 of these elements 5 facing each other, and the insulator 6 consisting of SiO2 is coated on the cleavage planes by performing a sputtering. At this time, as the insulator 6 is unavoidably adhered to the electrode 3 located on the upper surface, the elements 5 are closely contacted using the pressing bars 8 and 9 provided at both ends, and the insulator 6 on the electrode 3 is removed by performing a sputtering. |
