Method of producing a semiconductor device comprising a plurality of recrystallized monocrystal regions.

摘要

A method for producing a semiconductor device comprising the steps of: forming an insulating layer on a substrate, said insulating layer having a plurality of concave portions respectively including a concave; forming a non-single crystalline silicon layer on a surface of said insulating layer; patterning said non-single crystalline silicon layer so that each concave portion is independently melting and flowing said patterned non-single crystalline silicon layer into said concave to form a single crystalline region in said concave by an irradiation with an energy ray; and forming a semiconductor element in said single crystalline region.