发明名称 Semiconductor integrated-circuit device with test circuit.
摘要 <p>A semiconductor integrated circuit (IC) I, II device Including therein a test circuit (20). The test circuit operates to distinguish the power source level or ground level occurring at an internal node (N), under testing located inside the semiconductor chip. The test circuit is comprised of a series-connected MIS transistor (24), and MIS diode (25). The gate (22), of the MIS transistor is connected to the internal node (N). The MIS diode is connected to an external input/output (I/O pin (21). The level at the internal node, i.e., the power source level or the ground level, can be distinguished by a first voltage level or a second voltage level applied to the external 1/0 pin, whichever enables a current to be drawn from the external I/O pin.</p>
申请公布号 EP0084260(A1) 申请公布日期 1983.07.27
申请号 EP19820306939 申请日期 1982.12.23
申请人 FUJITSU LIMITED 发明人 KABASHIMA, KATSUHIKO;TAKEMAE, YOSHIHIRO;NOZAKI, SHIGEKI;OHIRA, TSUYOSHI;MIYAHARA, HATSUO;KANAI, MASAKAZU;ENOMOTO, SEIJI
分类号 H01L21/822;G01R31/26;G06F11/00;H01L21/66;H01L27/00;H01L27/04;(IPC1-7):01R31/28 主分类号 H01L21/822
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