| 摘要 |
PURPOSE:To make an infrared radiation cutting filter being indispensable so far to single crystal Si as unnecessary when the photo sensor is to be formed by providing photosensitive regions of the plural number on the face on one side of a transparent substrate, while by forming optical filters of the plural number having different wave-length transmitting regions on the face on another side making to correspond therewith by a method wherein the photosensitive regions are constituted of photo active layers mainly consisting of an amorphous semiconductor. CONSTITUTION:The photosensitive regions 11R, 11G, 11B of the plural number are formed on the face on one side of the transparent substrate 10 consisting of glass, heat resisting plastics, etc. At this time, the regions thereof are constituted of laminated bodies of the photo active layers 13R, 13G, 13B consisting of transparent electrodes 12R, 12G, 12B and the amorphous semiconductor, and moreover metal electrodes 14R, 14G, 14B from the substrate side. Then the filters 15R, 15G, 15B of red, green, blue are adhered to the face of the substrate 10 on another side making to face with the regions thereof. Accordingly the infrared radiation cutting filter is eliminated without using single crystal Si of which the peak of sensitivity exists in the infrared region. |
