| 摘要 |
<p>A semiconductor memory device comprised of, at least, a memory cell including a first Schottky diode therein, a word line, a bit line, a first constant-current circuit functioning for the word line, a second constant-current circuit functioning for the bit line, and a bias circuit for biasing the first and second constant-current circuits. The bias circuit contains therein a second Schottky barrier diode. A forward voltage VF of the second Schottky barrier diode is substantially the same as that of the first Schottky barrier diode.</p> |
