| 摘要 |
PURPOSE:To improve the characteristics of the thin film semiconductor device by a method wherein a source and drain region is formed by self-matching with a gate wiring, theeby enabling to reduce the capacitance between a gate and a drain. CONSTITUTION:The gate wiring 10 is formed on an insulating substrate 9, a gate oxide film 11 is covered on the whole surface including said gate wiring 10, and in the above state of condition, the substrate 9 is placed in a decompression container. Then, the gas containing monosilane and phosphine is poured on the surface where an element will be formed, and a beam of light is irradiated from the back side of the substrate 9 whereon no element will be formed. Through these procedures, the light which passed through the substrate 9 is intercepted at the part where the wiring 10 exists, and an N type amorphous silicon films 12 and 13 are grown by self-matching action, in optical vapor-phase on the oxide film 11 only of the light-trasmitted part. At this time, the above reaction is continued until the transmitted light coming from the substrate 9 is completely absorbed, and subsequently, the reaction comes to a stop automatically. Then, the films 12 and 13 are used as source and drain regions. |
