| 摘要 |
PURPOSE:To obtain the laser which will be stably operated for a long period by a method wherein, when an insulator as a protective film is coated on the end face wherefrom semiconductor laser luminous output will be picked out, the insulator is coated on the exposed end face alone by pinching and covering the electrodes provided on the front and back sides of the electrode using a jig. CONSTITUTION:On an N type GaAs substrate 1, an N type Ga1-xAlxAs (10< x<=1) layer 2, a Ga1-xAlxAS (0<x<=1) active layer 3, a P type Ga1-xAlxAS (0< x<=1) layer 4, and an N type GaAs layer 5 are laminated and epitaxially grown. Then, a stripe-shaped P<+> region 6 is formed in the center part of the layer 5 by diffusion for use as a current path, a P type electrode 7 is coated on the layer 5 and an N type electrode 8 is coated on the back side of the substrate 1. Subsequently, a number of laser elements 11 obtained as above are arranged, with their plane cleavage turned up, on the inclined sample stand 14 provided on the surface of the substrate 16, the electrode surface exposed on both sides is pinched between a fixed bar 12, a variable bar 13 and a weight piece 15, and an insulator 17 is coated on the cleavage plane along under the above state. |
