发明名称 |
Barrier-free, low-resistant electrical contact on III-V semiconductor material |
摘要 |
A contact structure on indium-containing III-V semiconductor material is comprised of a four layer sequence consisting of an indium layer in direct contact with the semiconductor material, a zinc layer in contact with the indium layer, a chromium-nickel or chromium or palladium or platinum layer in contact with the zinc layer and a gold layer for external contacting with a lead. An exemplary embodiment of such contact structure exhibits specific contact resistance ranging between about 10-4 and 10-5 ohm x cm2.
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申请公布号 |
US4395727(A) |
申请公布日期 |
1983.07.26 |
申请号 |
US19810244723 |
申请日期 |
1981.03.17 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
LAUTERBACH, CHRISTL |
分类号 |
H01L21/28;H01L21/285;H01L23/482;H01L29/45;(IPC1-7):H01L23/48;H01L23/54;H01L29/40;H01L29/54 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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