| 摘要 |
<p>PURPOSE:To obtain a semiconductor storage device of simple constitution equipped with an address decoder which operates at a high speed with low power consumption by controlling a word line driving circuit equipped with MOSFETs according to a decoder output. CONSTITUTION:According to the output of the address decoder consisting of MOSFETs Q1-Q7, the word line driving circuit of the inverted push-pull circuit consisting of depletion type MOSFETs and driving MOSFETs Q13-Q12, and Q15 and Q14, and earth potential side output MOSFETs and power voltage side output MOSFETs Q16 and Q17, and Q18 and Q19, etc., constituting inverters is controlled. Those FETs Q16 and Q17, etc., have large current capacity and operate complementarily to drive a word line W1, etc., speedily, and while not current flows, power consumption never increases. Further, the load impedance of the FETs Q3, Q13, etc., is set large and the power consumption by a DC current flowing through the inverter part is reduced. Therefore, the semiconductor storage device of simple constitution equipped with the address decoder which operates at a high speed with less power consumption is obtained.</p> |
