发明名称 SENSE AMPLIFIER FOR ROM DEVICE
摘要 <p>PURPOSE:To take out signals of which one is the same as a memory output in phase and the other is opposite in phase, by providing two differential amplifiers where the same reference voltage is supplied to one input differential MOSFETs. CONSTITUTION:Differential amplifiers 5a and 5b consist of input differential MOSFETs Q1 and Q2, load MOSFETs Q3 and Q4, and a MOSFET Q5 for constant current. A memory output (d) is applied to the gate of the FET Q1 of the amplifier 5a, and a reference voltage VR is applied to the gate of the FET Q2. The memory output (d) is applied to the gate of the FET Q2 of the amplifier 5b, and the reference voltage VR is applied to the gate of the FET Q1. By this constitution, the signal opposite to that of the memory output (d) in phase is taken out from a node A of the amplifier 5a, and the same signal as the memory output (d) in phase is taken out from the node A of the amplifier 5b.</p>
申请公布号 JPS58125282(A) 申请公布日期 1983.07.26
申请号 JP19820006006 申请日期 1982.01.20
申请人 HITACHI SEISAKUSHO KK 发明人 AOKI KAZUO
分类号 G11C17/00;G11C11/419;G11C17/12;G11C17/18 主分类号 G11C17/00
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