| 发明名称 |
Transparent conductive film having areas of high and low resistivity |
| 摘要 |
A method of forming areas of high and low resistivity in a transparent film of indium oxide and zirconium oxide is disclosed. The film is selectively ion implanted with protons and then annealed to lower the resistivity in the non-implanted portion.
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| 申请公布号 |
US4395467(A) |
申请公布日期 |
1983.07.26 |
| 申请号 |
US19810335707 |
申请日期 |
1981.12.30 |
| 申请人 |
RCA CORPORATION |
发明人 |
VOSSEN, JR., JOHN L.;ZELEZ, JOSEPH |
| 分类号 |
C04B41/00;C04B41/80;G02F1/1343;H01B1/08;H01L31/18;(IPC1-7):C23C15/00;B05D3/06 |
主分类号 |
C04B41/00 |
| 代理机构 |
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| 主权项 |
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