| 摘要 |
PURPOSE:To contrive improvement in doping efficiency by a method wherein the gas molecule containing the element to be turned to a dopant is decomposed with plasma, and a doping is performed by controlling the quantity of decomposed gas and by changing the high frequency power of a plasma generating source. CONSTITUTION:The gas molecule containing the element to be turned to a dopant is decomposed with plasma, and the density of doping is brought under control by controlling the quantity of decomposed gas by changing the power of a plasma generating source. For example, dopant gas is introduced into an MBE growing chamber 6 before the growth of GaAs or the GaAs is being grown, and 100W of the high frequency power of the frequency of 13.56 MHz is applied. The dopant gas is turned to a radical by partial or total decomposition by high frequency heating, and it reaches the GaAs substrate 7 which is heated up to 600 deg.C by the filament 9 to be used for heating of the substrate. Said radical is adhered to the GaAs substrate 7 and decomposed, and it is turned into Si or C and brought into the grown layer as a dopant. As a result, doping efficiency can be improved.
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