| 摘要 |
PURPOSE:To perform high integration and high performance by performing a beam annealing in the state that impurity and argon are doped on a substrate. CONSTITUTION:With a gate electrode 107 and a field region 105 as masks n<+> type source and drain regions 108, 109 are formed. Then, a CVD-SiO2 film 110 is accumulated on the overall surface, contacting holes 111 are opened at the film 110 on the regions 108, 109, and Al electrodes 112, 113 which produce the source and drain are formed by depositing and patterning of the Al film, thereby manufacturing an MOSLSI. The field region 105 to be self-aligned for the resist pattern having no bird beak can be formed, and a P<+> type impurity layer 103 is prevented from expanding. Accordingly, an MOSLSI having high integration can be obtained. Since the surface of the region 105 has the same level as the surface of the substrate 101, the stepwise disconnection of wirings due to the stepwise difference can be prevented in the field region. |
