| 摘要 |
PURPOSE:To obtain high performance integrated circuit having fine electrode wirings having excellent reliability by forming the electrode wirings by treating electrode wiring material which is selectively ion implanted in the prescribed region. CONSTITUTION:Aluminum 203 is coated as an electrode wiring material on a silicon substrate 201 which contains silicon oxidized film 202, and impurity ions such as boron ions are selectively implanted on the presribed region 204 of the aluminum 203. The implanting amount is practically preferably 10<14>- 10<15>atoms/cm<2>. Then, the aluminums 203, 204 are etched, for example, with a solution mainly containing nitric acid and water, thereby forming aluminum electrode wirings only on the prescribed region 204. |
