| 摘要 |
PURPOSE:To reduce capacitance between the gate and drain of the thin-film semiconductor device, and to increase the speed of response of a circuit by positioning gate wiring at the same time in a photoetching process in which the drain is formed. CONSTITUTION:N Type amorphous silicon film or N type polycrystalline silicon layers 10, 11 functioning as source-drain are formed prior to the formation of the gate wiring, and the N type silicon layers of a channel section are removed through a photoetching method. An insulating substrate 9 is etched at the same time, and a groove 14 is formed. The gate wiring is shaped into the groove 14, and a gate oxide film is formed onto the gate wiring through a vapor growth method. Photo-resist 12, 13 are used in order to form the gate wiring 16 and the gate oxide film 17 in the groove of an insulating substrate 15, and a gate wiring film and the gate oxide film are lifted off and formed at the same time. The gate wiring is self-aligned to the drain. |
