| 摘要 |
PURPOSE:To obtain manufacture of the titled device in which erasing characteristics and their reproducibility are aquired by melting and recrystallizing a polycrystalline silicon layer for a floating gate through the irradiation of laser beams. CONSTITUTION:A field insulating film 1, a gate insulating film 3 and the polycrystalline silicon layer 10 for the floating gate (F.G), onto the surface thereof a thermal oxide film 11 is formed, are formed onto a silicon substrate 2. When laser-beams 13 are irradiated, a region on the film 1 not coated with a mask film 12 is changed into a melted recrystallized region 10', and shows crystallinity close to a single crystal. A control gate CG-1 is prepared, and boron ions are implanted into the region 10' and the P<+> type conduction region of the F.G is formed. A polycrystalline silicon layer pattern 17 as a second control gate CG-2 is formed, and an N type impurity is introduced in order to prepare source- drain regions. |
