SEMICONDUCTOR MEMORY STORAGE

摘要

PURPOSE:To reduce power consumption required for fusing by forming a fuse section onto an insulating film with stepped difference and blowing out the fuse section by utilizing the difference of thermal conductivity due to the difference of the thickness of the insulating film. CONSTITUTION:An initial oxide film 7, a gate oxide film 8 and a polysilicon film 9 are formed onto a silicon wafer 6. A fuse blowout section 13 constituting a fuse ROM is formed onto the stepped difference of the thick initial oxide film 7 and the thin polysilicon film 9. According to such constitution, the fusing section 13 can be fused by the pulses of small energy by utilizing the difference of thermal conductivity generated due to the difference of thickness on the insulating film. The whole area can be reduced because the position of fusing is formed in the direction longitudinal to a substrate.