| 摘要 |
PURPOSE:To compensate temperature in the strain gage for the semiconductor by using a diffusion resistor formed to the supporting section of the strain gage for the semiconductor as a temperature sensing element. CONSTITUTION:An N type silicon substrate 21 is constituted by a diaphragm section 21A and the supporting section 21B. Resistors Rc, Rt for a strain gage bridge consisting of the P type diffusion layer are formed onto the surface of the diaphragm section 21A, and a resistor RG for temperature compensation composed of the P type diffusion layer is formed to the supporting section 21B. The strain gage for the semiconductor is prepared by a resistance net Rs for detecting currents, the bridge 2, a differential amplifier 4 controlling voltage applied between the resistance net Rs so that it reaches constant value Es, and a transistor 3 by using such a substrate 21. Accordingly, temperature can be compensated by a circuit consisting of the resistor RG incorporated into the sensor of the strain gage for the semiconductor and another simple constitution. |
