| 摘要 |
PURPOSE:To provide a semiconductor device having an interlayer insulating film structure capable of forming a thick film and of using an inorganic film with ready coating by coating a film made of silicon organic compound on the first layer wirings, then removing the corresponding part of the organic component and using as the insulating film between the wrings the insulating film. CONSTITUTION:The first layer Al wirings 3 are formed on an SiO2 film 2 on an Si substrate 1 formed with elements by an ordinary method. A solution of silicon rudder resin 7 which is dissolved in MIBK (methylisobutyl ketone) is rotatably coated by a spinner on the wirings. Then, a heat treatment is performed in nitrogen. Subsquently, a het treatment is performed in oxygen atmosphere. In this manner, the resin is removed from organic components, and an SiO2 is formed. Thereafter, to electrically conduct between the first layer Al wirings 3 and the second layer wirings, a through hole part 5 is formed. This can be readily formed by employing a photoresist pattern and a plasma etching. Then, the second layer Al wirings 4 are formed by depositing an Al film and photoetching, and a plasma nitrided film 6 is deposited as a protective film. |
