| 摘要 |
PURPOSE:To estimate easily the characteristics such as channel length of FET and mutual conductance etc. by a method wherein a bipolar transistor for monitoring is formed on the surface of the same substrate of duplicate diffused and insulated FET. CONSTITUTION:A bipolar transistor B is formed on a substrate similar to the substrate 11 formed into a duplicate diffused and insulated gate FET A. The base region 13b of the bipolar transistor B and the channel 13a of the FET A are formed into the same conductive type with the same depth of diffusion. Through the constitution so far mentioned, specific relations may be established between the amplification degree of the bipolar transistor B and the channel length of the FET. Therefore, the characteristics such as the channel length of FET A and the mutual conductance etc. may be monitored by means of measuring the amplification degree of the transistor B. |
