| 摘要 |
PURPOSE:To improve the accuracy of a pattern formed on a film to be etched by tilting the angle of ion incidence and rotating a specimen in the ion milling process. CONSTITUTION:An insulating film 2, a conductor film 3, an insulating film 4, a permalloy film 5, a mask film 6, and a resist film are provided on a substrate 1 and the film 6 is etched with patterns 7, 8 provided on the resist film as a mask. Subsequently, ion milling is conducted to etch the exposed portion on the film 5. At this time, the angle of ion incidence is tilted by 5-30 degrees against the perpendicular direction to the surface of the substrate and the substrate is kept turning. The exposed portion of the film 6 is again etched. Subsequently, the exposed portions of the films 5, 4 and the film 3 under them are removed by the ion milling as in the case of the above process. Finally, the resist 7, 8 and the film 6 are removed. |
