| 摘要 |
PURPOSE:To readily form a silicon single crystal thin film without influences of the type and ruggedness of a substrate by interposing a ZnS thin film between the substrate and a thin silicon film. CONSTITUTION:A ZnS thin film 2 is formed by a deposition method, for example, in thickness of 0.5-1mum on a substrate 1, a silicon single crystal thin film 3 is grown, for example, in thickness of approx. 0.5mum by an ordinary molecular beam epitaxial method or CVD method on the film 2, and an MOS transistor is, for example, formed in the film 3. An insulating and protecting film of the film 2 is accumulated on electrodes 7, 8, 9, ZnS film is subsequently deposited t form 2-layer film 10, and a silicon single crystal thin film 3 is grown on the film 10. When these steps are repeated, a stereoscopic circuit integrated in three dimensions can be formed. According to this method, a heat treatment such as a laser annealing can be eliminated, thereby readily facilitating the multilayer formation of a device. |
