| 摘要 |
PURPOSE:To accelerate SBD-TTL by a method wherein, in a semiconductor de- vice provided with SBD and N-P-N transistors on a substrate, the values of impurity concentration gradient at each transistor are specified. CONSTITUTION:In a semiconductor device provided with Schottky barrier diode (SBD) and N-P-N transistors on a substrate, the values of impurity concentration gradient at the section A-A' of N-P-N transistor and the same at the section B-B' of SBD are specified. Through the constitution, the capacity Crc of N-P-N transistor may be reduced to accelerate N-P-N transistor. Besides, in the Si layer directly below SBD, the impurity concentration is lower at the shallow part providing favorable characteristics in the normal direction while the impurity concentration is higher at the deep part reducing the series resistance of SBD. |
