| 摘要 |
PURPOSE:To eliminate the electrically floating state of a semiconductor substrate by connecting different or equal conductive type impurity regions of the first and second field effect semiconductor elements through holes formed at the interlayer insulating films, thereby performing high integrated. CONSTITUTION:Since the semiconductor substrate 381 of the first MOS transistor is connected to wirings 28 formed on a silicon substrate 21, it can eliminate the electrically floating state of the substrate 381, and the potential does not very, with the result that is does not affect the adverse influence to the circuit performance. When the source region 362 of the second MOS transistor is connected through the second hole 302 formed at a CVD-SiO2 film 29 via an MoSi2 film 322 to the source region 26 of the first transistor, high integration can be performed without necessity of providing excess space in the connection between the elements, and the connection is performed by the MoSi2 film. Accordingly, ohmic contact is possible. Even in case of connecting a p type semiconductor substrate 381 and n<+> type wirings 28, the ohmic contact can be performed without p-n junction. |
