| 摘要 |
PURPOSE:To obtain an inspection circuit for semiconductor devices capable of measuring an error of the gate length immediately and clearly from outside without opening a container by providing a pull-down circuit. CONSTITUTION:A pull-down section 100 is provided to obtain an input signal as binary coded value of a power source voltage and an earth voltage. When the width of polysilicons 11-15 of a checked pattern 10 coincides with the designed value, the power source is inputted into polysilicons 12-15 to be measured through resistances 111-114 from power sources 116-119 and transmitted to terminals 107-110 as staying at a high potential from the pull-down section 100 and hence, digital signals '1' are each outputted to the terminals 107-110. When the width of the polysilicons 12-15 is somewhat larger than the designed value, upon the contact of 0 objects 11 and 12 to be measured, the power source voltage of a power source 116 turns to the earth potential and a signal 0 is outputted to the terminal 107. On the contrary, when it is smaller than the designed value and an object 15 to be measured is disconnected, the power source voltage of the power source 119 turns to a low potential and a signal 0 is outputted. Thus, errors in the gate length L can be obtained from external terminals. |
