| 摘要 |
PURPOSE:To prevent generation of warpage of substrate and enhance yield of semiconductor device by forming a Si3N4 film at the rear side of Si substrate and then forming a polycrystalline Si layer on the front surface. CONSTITUTION:A V-shaped groove is formed on the front surface of Si substrate, the entire part is covered with a Si3N4 film through thermal oxidation under the pressurized condition, the Si3N4 film 13 is formed in the thickness of 3,000Angstrom by the plasma CVD method only on the rear side of substrate and is then processed at 1,150 deg.C in the H2 ambient. Thereby, a substrate 1 sinks toward the film 13. Then, a poly-Si film 5 is grown on the surface by the CVD method. When a growth time is selected, warpage is cancelled each other and the substrate is deposited in the flat condition. When polishing is carried out from the film 13 of substrate 1 to the center of V-shaped groove, yield of obtaining semiconductor device from a sheet of substrate can be improved without disappearing of land regions in the vicinity of substrate. |
